US Patent Issued to STMICROELECTRONICS on Nov. 18 for "Z-axis microelectromechanical sensor device with improved stress insensitivity" (Italian Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,474,368, issued on Nov. 18, was assigned to STMICROELECTRONICS S.R.L. (Agrate Brianza, Italy).

"Z-axis microelectromechanical sensor device with improved stress insensitivity" was invented by Gabriele Gattere (Castronno, Italy), Francesco Rizzini (Passirano, Italy) and Cristian Dall'Oglio (Niscemi, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectromechanical sensor device has a detection structure, having: a substrate, with a top surface; an inertial mass, suspended above the top surface of the substrate and elastically coupled to a rotor anchor so as to perform an inertial movement relative to the substrate as a function of a quantity ...