US Patent Issued to STMICROELECTRONICS on May 20 for "Manufacturing method of a semiconductor device with efficient edge structure" (Italian Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,235, issued on May 20, was assigned to STMICROELECTRONICS S.r.l. (Agrate Brianza, Italy).

"Manufacturing method of a semiconductor device with efficient edge structure" was invented by Edoardo Zanetti (Valverde, Italy), Simone Rascuna' (Catania, Italy), Mario Giuseppe Saggio (Aci Bonaccorsi, Italy), Alfio Guarnera (Trecastagni, Italy), Leonardo Fragapane (Catania, Italy) and Cristina Tringali (Augusta, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implan...