US Patent Issued to STMICROELECTRONICS on May 13 for "Wide band gap semiconductor electronic device having a junction-barrier Schottky diode" (Italian Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,624, issued on May 13, was assigned to STMICROELECTRONICS S.R.L. (Agrate Brianza, Italy).

"Wide band gap semiconductor electronic device having a junction-barrier Schottky diode" was invented by Simone Rascuna (Catania, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "The vertical-conduction electronic power device is formed by a body of wide band gap semiconductor which has a first conductivity type and has a surface, and is formed by a drift region and by a plurality of surface portions delimited by the surface. The electronic device is further formed by a plurality of first implanted regions having a second conductivity type, which extend int...