US Patent Issued to STMicroelectronics on March 18 for "Silicon carbide vertical conduction MOSFET device for power applications and manufacturing process thereof" (Italian Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,233, issued on March 18, was assigned to STMicroelectronics S.r.l. (Agrate Brianza, Italy).

"Silicon carbide vertical conduction MOSFET device for power applications and manufacturing process thereof" was invented by Mario Giuseppe Saggio (Aci Bonaccorsi, Italy), Alessia Maria Frazzetto (Sant'Agata Li Battiati, Italy), Edoardo Zanetti (Valverde, Italy) and Alfio Guarnera (Trecastagni, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical conduction MOSFET device includes a body of silicon carbide having a first conductivity type and a face. A metallization region extends on the face of the body. A body region of a second conductivity type...