US Patent Issued to STMICROELECTRONICS on March 11 for "Vertical-conduction silicon carbide MOSFET device having improved gate biasing structure and manufacturing process thereof" (Italian Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,634, issued on March 11, was assigned to STMICROELECTRONICS S.r.l. (Agrate Brianza, Italy).

"Vertical-conduction silicon carbide MOSFET device having improved gate biasing structure and manufacturing process thereof" was invented by Mario Giuseppe Saggio (Aci Bonaccorsi, Italy), Alfio Guarnera (Trecastagni, Italy) and Cateno Marco Camalleri (Catania, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical-conduction MOSFET device formed in a body of silicon carbide having a first and a second face and a peripheral zone. A drain region, of a first conductivity type, extends in the body between the two faces. A body region, of a second conduc...