US Patent Issued to STMicroelectronics on June 24 for "4H-SiC electronic device with improved short-circuit performances, and manufacturing method thereof" (Italian Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,582, issued on June 24, was assigned to STMicroelectronics S.r.l. (Agrate Brianza, Italy).

"4H-SiC electronic device with improved short-circuit performances, and manufacturing method thereof" was invented by Mario Giuseppe Saggio (Aci Bonaccorsi, Italy), Angelo Magri' (Belpasso, Italy), Edoardo Zanetti (Valverde, Italy) and Alfio Guarnera (Trecastagni, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electronic device includes a semiconductor body of silicon carbide, and a body region at a first surface of the semiconductor body. A source region is disposed in the body region. A drain region is disposed at a second surface of the semiconduct...