US Patent Issued to STMICROELECTRONICS on July 29 for "Process for working a wafer of 4H-SiC material to form a 3C-SiC layer in direct contact with the 4H-SiC material" (Italian Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,545, issued on July 29, was assigned to STMICROELECTRONICS S.r.l. (Agrate Brianza, Italy).

"Process for working a wafer of 4H-SiC material to form a 3C-SiC layer in direct contact with the 4H-SiC material" was invented by Gabriele Bellocchi (Catania, Italy), Simone Rascuna' (Catania, Italy), Paolo Badala' (Acireale, Italy) and Anna Bassi (Gravina di Catania, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Process for manufacturing a 3C-SiC layer, comprising the steps of: providing a wafer of 4H-SiC, provided with a surface; heating, through a LASER beam, a selective portion of the wafer at least up to a melting temperature of the material of th...