US Patent Issued to STMicroelectronics on Feb. 11 for "Gate contact structure for a trench power MOSFET with a split gate configuration" (Singaporean Inventors)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,342, issued on Feb. 11, was assigned to STMicroelectronics Pte Ltd (Singapore).

"Gate contact structure for a trench power MOSFET with a split gate configuration" was invented by Yean Ching Yong (Singapore), Maurizio Gabriele Castorina (Singapore), Voon Cheng Ngwan (Singapore), Ditto Adnan (Singapore), Fadhillawati Tahir (Singapore) and Churn Weng Yim (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit transistor device includes a semiconductor substrate providing a drain, a first doped region buried in the semiconductor substrate providing a body and a second doped region in the semiconductor substrate providing a source...