US Patent Issued to STMicroelectronics on Feb. 10 for "Silicon carbide vertical conduction MOSFET device and manufacturing process thereof" (Italian Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,397, issued on Feb. 10, was assigned to STMicroelectronics S.r.l. (Agrate Brianza, Italy).

"Silicon carbide vertical conduction MOSFET device and manufacturing process thereof" was invented by Mario Giuseppe Saggio (Aci Bonaccorsi, Italy), Edoardo Zanetti (Valverde, Italy), Alessia Maria Frazzetto (Sant'Agata li Battiati, Italy), Alfio Guarnera (Trecastagni, Italy), Cateno Marco Camalleri (Catania, Italy) and Antonio Giuseppe Grimaldi (S. Giovanni la Punta, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical conduction MOSFET device includes a body of silicon carbide, which has a first type of conductivity and a face. A superficial body ...