US Patent Issued to STMicroelectronics on Aug. 12 for "Split-gate trench MOS transistor with self-alignment of gate and body regions" (Italian Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,620, issued on Aug. 12, was assigned to STMicroelectronics S.r.l. (Agrate Brianza, Italy).

"Split-gate trench MOS transistor with self-alignment of gate and body regions" was invented by Davide Giuseppe Patti (Mascalucia, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A process is proposed for manufacturing an integrated device having at least one MOS transistor integrated on a die of semiconductor material. The process includes forming one or more gate trenches with corresponding field plates and gate regions. A body region is formed by implanting dopants selectively along one or more implantation directions that are tilted with respect to a ...