US Patent Issued to STMICROELECTRONICS on April 15 for "HEMT transistor including an improved gate region and related manufacturing process" (Italian Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,283, issued on April 15, was assigned to STMICROELECTRONICS S.r.l. (Agrate Brianza, Italy).

"HEMT transistor including an improved gate region and related manufacturing process" was invented by Ferdinando Iucolano (Gravina di Catania, Italy) and Cristina Tringali (Augusta, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "An HEMT includes a semiconductor body, which includes a semiconductor heterostructure, and a conductive gate region. The gate region includes: a contact region, which is made of a first metal material and contacts the semiconductor body to form a Schottky junction; a barrier region, which is made of a second metal material and is...