US Patent Issued to STMicroelectronics International on Nov. 11 for "Protection of an integrated circuit against electrostatic discharges" (French Inventor)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,470,058, issued on Nov. 11, was assigned to STMicroelectronics International N.V. (Geneva).

"Protection of an integrated circuit against electrostatic discharges" was invented by Francois Tailliet (Fuveau, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "An ESD protection circuit includes a first voltage limiter having a first input terminal electrically coupled to each first signal pad of an integrated circuit by a first diode mounted in reverse bias during the integrated circuit operation. The first voltage limiter is mounted to be conductive between each first signal pad and ground during a positive ESD on the first signal pad. A second voltage ...