US Patent Issued to STMicroelectronics International on Nov. 11 for "Process and temperature compensated word line underdrive scheme for SRAM" (Indian Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,549, issued on Nov. 11, was assigned to STMicroelectronics International N.V. (Geneva).

"Process and temperature compensated word line underdrive scheme for SRAM" was invented by Ashish Kumar (Ranchi, India) and Dipti Arya (Noida, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein is an electronic device, including a plurality of row decoders. Each row decoder includes decoder logic generating an initial word line signal and word line driver circuitry generating an inverse word line signal at an intermediate node from the initial word line signal, and generating a word line signal at a word line node from the inverse word line sig...