US Patent Issued to STMicroelectronics International on Nov. 11 for "Bit line read current mirroring circuit for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)" (Indian Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,545, issued on Nov. 11, was assigned to STMicroelectronics International N.V. (Geneva).

"Bit line read current mirroring circuit for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)" was invented by Kedar Janardan Dhori (Ghaziabad, India), Promod Kumar (Greater Noida, India), Nitin Chawla (Noida, India), Harsh Rawat (Faridabad, India) and Manuj Ayodhyawasi (Noida, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "An in-memory computation circuit includes a memory array with SRAM cells connected in rows by word lines and in columns by bit lines. A row controller circuit simulta...