ALEXANDRIA, Va., June 25 -- United States Patent no. 12,340,099, issued on June 24, was assigned to STMicroelectronics International N.V. (Geneva).
"Static random access memory supporting a single clock cycle read-modify-write operation with a modulated word line assertion" was invented by Praveen Kumar Verma (Greater Noida, India) and Harsh Rawat (Faridabad, India).
According to the abstract* released by the U.S. Patent & Trademark Office: "A read-modify-write operation is performed, within a single cycle of a clock signal, by: decoding an address to select a word line of a memory; applying a word line signal at a first voltage level to the selected word line; reading a current data word from a data word location in the memory; reducing ...