US Patent Issued to STMicroelectronics International on July 8 for "Adaptive word line underdrive control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)" (Indian Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,644, issued on July 8, was assigned to STMicroelectronics International N.V. (Geneva).

"Adaptive word line underdrive control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)" was invented by Kedar Janardan Dhori (Ghaziabad, India), Nitin Chawla (Noida, India), Promod Kumar (Greater Noida, India), Manuj Ayodhyawasi (Noida, India) and Harsh Rawat (Faridabad, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "An in-memory computation circuit includes a memory array with SRAM cells connected in rows by word lines and in columns by bit lines. Each row includes a word line drive ...