ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,992, issued on Jan. 13, was assigned to STMicroelectronics International N.V. (Geneva).
"Memory cell" was invented by Patrick Calenzo (Peypin, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell includes first, second, and third semiconductor regions laterally bounded by insulated conductive walls; a first insulating layer overlaying the first, second, and third semiconductor regions; and a second conductive layer disposed facing a part of each of first, second, and third semiconductor regions. A first top part of the first semiconductor region is first conductivity type doped and faces the second conductive layer. The second semicon...