ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,483,208, issued on Nov. 25, was assigned to STMICROELECTRONICS France (Montrouge, France).
"Radio frequency power amplifier" was invented by Samia Ouyahia (Vernouillet, France), Renaud Lemoine (Champigny sur Marne, France) and Eric Wilhelm (Gisors, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to an embodiment, An integrated circuit comprising a first cascode radio frequency (RF) power amplifier that includes a first common source transistor having a gate configured to receive a first RF signal, and a source connected to a neutral point; a first common gate transistor having a gate and a drain connected to a power source node, and a so...