US Patent Issued to STMicroelectronics France on Dec. 30 for "Electronic device comprising two high electron mobility transistors" (French Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,932, issued on Dec. 30, was assigned to STMicroelectronics France (Montrouge, France).

"Electronic device comprising two high electron mobility transistors" was invented by Matthieu Nongaillard (Grenoble, France) and Thomas Oheix (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure concerns an electronic device comprising a HEMT transistor, called main transistor, and at least another HEMT transistor, called additional transistor, stacked on each other. The main transistor and the additional transistor comprise a common drain electrode and, respectively, a main source electrode and an additional source electrode, arranged ...