US Patent Issued to STMicroelectronics France, STMicroelectronics International on May 13 for "Electronic device comprising two high electron mobility transistors" (French Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,625, issued on May 13, was assigned to STMicroelectronics France (Montrouge, France) and STMicroelectronics International N.V. (Geneva).

"Electronic device comprising two high electron mobility transistors" was invented by Matthieu Nongaillard (Grenoble, France) and Thomas Oheix (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure concerns an electronic device provided with two high electron mobility transistors stacked on each other and having in common their source, drain, and gate electrodes. For example, each of these electrodes extends perpendicularly to the two transistors. For example, the source and drain electrode...