US Patent Issued to STMicroelectronics France, STMicroelectronics International on July 15 for "Electronic device provided with a stack of two high electron mobility transistors arranged in a bridge half-arm" (French Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,932, issued on July 15, was assigned to STMicroelectronics France (Montrouge, France) and STMicroelectronics International N.V. (Geneva).

"Electronic device provided with a stack of two high electron mobility transistors arranged in a bridge half-arm" was invented by Matthieu Nongaillard (Grenoble, France) and Thomas Oheix (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure concerns an electronic device comprising, stacked from a first surface to a second surface, a first stack and a second stack of two high electron mobility transistors, referred to as first and second transistor, the first and the second stack each comp...