US Patent Issued to STMICROELECTRONICS APPLICATION, STMICROELECTRONICS (TOURS) on Nov. 18 for "Monolithic component comprising a gallium nitride power transistor" (French, German Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,816, issued on Nov. 18, was assigned to STMICROELECTRONICS APPLICATION GMBH (Aschheim-Dornach, Germany) and STMICROELECTRONICS (TOURS) SAS (Tours, France).

"Monolithic component comprising a gallium nitride power transistor" was invented by Mathieu Rouviere (Tours, France), Arnaud Yvon (Saint-Cyr sur Loire, France), Mohamed Saadna (Saint Cyr-sur-Loire, France) and Vladimir Scarpa (Dusseldorf, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A monolithic component includes a field-effect power transistor and at least one first Schottky diode inside and on top of a gallium nitride substrate."

The patent was filed on Sept. 29, 2023, under Applic...