US Patent Issued to STMicroelectronics (Tours) on Sept. 30 for "Circuit and method for controlling a transistor" (French Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,885, issued on Sept. 30, was assigned to STMicroelectronics (Tours) SAS (Tours, France).

"Circuit and method for controlling a transistor" was invented by Diawoye Cisse (Tours, France), Bertrand Rivet (Vouvray, France) and Frederic Gautier (Monnaie, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for controlling a MOS transistor compares a first voltage between a drain and a source of the MOS transistor to a second controllable threshold voltage. When the first voltage is smaller than a third voltage, a fourth control voltage is applied to the MOS transistor that is greater than a fifth threshold voltage of the MOS transistor. When t...