ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,602, issued on June 24, was assigned to STMICROELECTRONICS (TOURS) SAS (Tours, France).
"Diode structure" was invented by Frederic Lanois (Tours, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a structure comprising, in a trench of a substrate, a first conductive region separated from the substrate by a first distance shorter than approximately 10 nm; and a second conductive region extending deeper than the first region."
The patent was filed on Dec. 30, 2021, under Application No. 17/566,435.
*For further information, including images, charts and tables, please visit: http://patft.uspto.gov/netacgi/nph-Par...