ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,009, issued on Dec. 23, was assigned to STMICROELECTRONICS (TOURS) SAS (Tours, France).
"Cavity forming method" was invented by Mohamed Boufnichel (Monnaie, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present description concerns a method of forming a cavity in a substrate comprising: the forming of an etch mask comprising, opposite the location of the cavity, a plurality of sets of openings, the ratio between the openings and the mask of each set being selected according to the desired profile of the cavity opposite the surface of the mask having the set inscribed therein; and the wet etching of the substrate through the openings."
T...