US Patent Issued to STMicroelectronics (Rousset) on Sept. 9 for "Integrated circuit including at least one capacitive element and corresponding manufacturing method" (French Inventor)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,360, issued on Sept. 9, was assigned to STMicroelectronics (Rousset) SAS (Rousset, France).

"Integrated circuit including at least one capacitive element and corresponding manufacturing method" was invented by Abderrezak Marzaki (Aix en Provence, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitive element includes a first conductive layer delimited by an outline and a low voltage dielectric layer covering the first conductive layer. A second conductive layer covers the low voltage dielectric layer and includes: a first portion located over a central zone of the first conductive layer which forms a first capacitor electrode; and a sec...