ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,649, issued on March 25, was assigned to STMICROELECTRONICS (ROUSSET) SAS (Rousset, France).
"Phase-change memory" was invented by Philippe Boivin (Venelles, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present description concerns a device including phase-change memory cells, each memory cell including a first resistive element in lateral contact with a second element made of a phase-change material."
The patent was filed on Oct. 22, 2021, under Application No. 17/508,754.
*For further information, including images, charts and tables, please visit: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2...