US Patent Issued to STMICROELECTRONICS (ROUSSET) on July 15 for "Method for producing an integrated circuit pointed element comprising etching first and second etchable materials with a particular etchant to form an open crater in a projection" (French Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,360,135, issued on July 15, was assigned to STMICROELECTRONICS (ROUSSET) SAS (Rousset, France).

"Method for producing an integrated circuit pointed element comprising etching first and second etchable materials with a particular etchant to form an open crater in a projection" was invented by Abderrezak Marzaki (Aix en Provence, France), Yoann Goasduff (Fuveau, France), Virginie Bidal (Fuveau, France) and Pascal Fornara (Pourrieres, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for detecting orientation of an integrated circuit is disclosed. The method includes moving, in response to a gravitational force, a mobile metallic piece in an e...