US Patent Issued to STMicroelectronics (Rousset) on Jan. 28 for "Insulation of phase-change memory cells" (French Inventor)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,213,392, issued on Jan. 28, was assigned to STMicroelectronics (Rousset) SAS (Rousset, France).

"Insulation of phase-change memory cells" was invented by Philippe Boivin (Venelles, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory devices and methods of manufacturing such devices are provided herein. In at least one embodiment, a memory device includes a plurality of phase-change memory cells. An electrically-insulating layer covers lateral walls of each of the phase-change memory cells, and a thermally-insulating material is disposed on the electrically-insulating layer and covers the lateral walls of the phase-change memory cells."

The pat...