US Patent Issued to STMicroelectronics (Rousset) on April 29 for "Integrated circuit comprising at least one bipolar transistor and a corresponding method of production" (French Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,884, issued on April 29, was assigned to STMicroelectronics (Rousset) SAS (Rousset, France).

"Integrated circuit comprising at least one bipolar transistor and a corresponding method of production" was invented by Romeric Gay (Aix-en-Provence, France) and Abderrezak Marzaki (Aix en Provence, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bipolar transistor includes a common collector region comprising a buried semiconductor layer and an annular well. A well region is surrounded by the annular well and delimited by the buried semiconductor layer. A first base region and a second base region are formed by the well region and separated from eac...