US Patent Issued to STMicroelectronics (Rousset), STMicroelectronics (Crolles 2) on June 17 for "Co-integrated vertically structured capacitive element and fabrication process" (French Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,429, issued on June 17, was assigned to STMicroelectronics (Rousset) SAS (Rousset, France) and STMicroelectronics (Crolles 2) SAS (Crolles, France).

"Co-integrated vertically structured capacitive element and fabrication process" was invented by Abderrezak Marzaki (Aix en Provence, France), Arnaud Regnier (Les Tallades, France) and Stephan Niel (Meylan, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "First and second wells are formed in a semiconductor substrate. First and second trenches in the first second wells, respectively, each extend vertically and include a central conductor insulated by a first insulating layer. A second insulating la...