US Patent Issued to STMicroelectronics (Grenoble 2), STMicroelectronics (Rousset) on April 1 for "Memory architecture of a near-field communication device" (French Inventors)

ALEXANDRIA, Va., April 2 -- United States Patent no. 12,267,126, issued on April 1, was assigned to STMicroelectronics (Grenoble 2) SAS (Grenoble, France) and STMicroelectronics (Rousset) SAS (Rousset, France).

"Memory architecture of a near-field communication device" was invented by Sylvie Wuidart (Pourrieres, France) and Sophie Maurice (Meylan, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A near-field communication device operates to transmit data by near-field communications techniques to another device. The near-field communication device includes a memory that stores a message to be transmitted in an ASCII format. The message is retrieved from the memory and transmitted using the near-field co...