US Patent Issued to STMicroelectronics (Grenoble 2), STMicroelectronics (Alps) on April 29 for "Bandgap circuit" (French Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,287,663, issued on April 29, was assigned to STMicroelectronics (Grenoble 2) SAS (Grenoble, France) and STMicroelectronics (Alps) SAS (Grenoble, France).

"Bandgap circuit" was invented by Vratislav Michal (Fontanil-Cornillon, France) and Regis Rousset (Corenc, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A band-gap circuit for generating a bandgap reference signal includes a first bipolar transistor and a second bipolar transistor of a same type among PNP and NPN types. The first and second bipolar transistors are configured to generate a current varying proportionally with the temperature. A capacitor is connected between a base and an emitter ...