ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,540, issued on Sept. 23, was assigned to STMicroelectronics (Crolles 2) SAS (Crolles, France).
"Via manufacturing method" was invented by Marios Barlas (Grenoble, France) and Pascal Gouraud (Montbonnot St. Martin, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method is presented for manufacturing an insulated conductive via. The via crosses a first stack of layers to reach a first layer. A first cavity is formed partially extending into the first stack of layers. A second stack of layers is formed over the first stack of layers and in the first cavity. The second stack of layers includes an etch stop layer and an insulating layer. A secon...