US Patent Issued to STMicroelectronics (Crolles 2) on July 29 for "Method for manufacturing a semiconductor device" (French Inventor)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,372,723, issued on July 29, was assigned to STMicroelectronics (Crolles 2) SAS (Crolles, France).

"Method for manufacturing a semiconductor device" was invented by Houssein El Dirani (Draveil, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "In accordance with an embodiment, a method for manufacturing a semiconductor device includes forming a first front layer and a first rear layer of a first material respectively on a front main face and a rear main face of a semiconductor substrate wafer; forming a first plurality of trenches and a second plurality of trenches respectively in a surface of the first front layer and in a surface of the first rear ...