US Patent Issued to STMicroelectronics (Crolles 2) on July 1 for "Etching method" (French Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,670, issued on July 1, was assigned to STMicroelectronics (Crolles 2) SAS (Crolles, France).

"Etching method" was invented by Delia Ristoiu (St. Ismier, France), Pierre Bar (Grenoble, France) and Francois Leverd (St. Ismier, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a method for forming a cavity that traverses a stack of layers including a bottom layer, a first portion of which locally presents an excess thickness, the method comprising a first step of non-selective etching and a second step of selective etching vertically in line with the first portion."

The patent was filed on Sept. 8, 2022, under Appl...