US Patent Issued to STMicroelectronics (Crolles 2), STMICROELECTRONICS (ROUSSET) on Nov. 25 for "Phase-change memory cell having a compact structure" (French Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,460, issued on Nov. 25, was assigned to STMicroelectronics (Crolles 2) SAS (Crolles, France) and STMICROELECTRONICS (ROUSSET) SAS (Rousset, France).

"Phase-change memory cell having a compact structure" was invented by Philippe Boivin (Venelles, France) and Simon Jeannot (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell includes a selection transistor having a control gate and a first conduction terminal connected to a variable-resistance element. The memory cell is formed in a wafer comprising a semiconductor substrate covered with a first insulating layer, the insulating layer being covered with an active layer made of...