US Patent Issued to STMicroelectronics (Crolles 2), STMICROELECTRONICS (ROUSSET) on June 24 for "Phase-change memory" (French Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,734, issued on June 24, was assigned to STMicroelectronics (Crolles 2) SAS (Crolles, France) and STMICROELECTRONICS (ROUSSET) SAS (Rousset, France).

"Phase-change memory" was invented by Philippe Boivin (Venelles, France), Roberto Simola (Trets, France) and Yohann Moustapha-Rabault (Saint-Egreve, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present description concerns a device including phase-change memory cells, each memory cell including a first resistive element in lateral contact with a second element made of a phase-change material."

The patent was filed on April 25, 2024, under Application No. 18/646,334.

*For further informati...