US Patent Issued to STMicroelectronics (Crolles 2), STMicroelectronics (Research & Development) on June 3 for "Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing method" (French, Dutch Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,251, issued on June 3, was assigned to STMicroelectronics (Crolles 2) SAS (Crolles, France) and STMicroelectronics (Research & Development) Ltd. (Marlow, Great Britain).

"Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing method" was invented by Denis Rideau (Grenoble, France), Dominique Golanski (Gieres, France), Alexandre Lopez (Eindhoven, Netherlands) and Gabriel Mugny (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A single photon avalanche diode (SPAD) includes a PN junction in a semiconductor well doped with a first type of dopant. The PN junction is formed between a first region doped...