US Patent Issued to STMicroelectronics, STMicroelectronics (Tours) on Oct. 7 for "Method of making a charge coupled field effect rectifier diode" (Singaporean, French Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,621, issued on Oct. 7, was assigned to STMicroelectronics PTE LTD (Singapore) and STMicroelectronics (Tours) SAS (Tours, France).

"Method of making a charge coupled field effect rectifier diode" was invented by Shin Phay Lee (Singapore), Voon Cheng Ngwan (Singapore), Frederic Lanois (Tours, France), Fadhillawati Tahir (Singapore) and Ditto Adnan (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A trench in a semiconductor substrate is lined with a first insulation layer. A hard mask layer deposited on the first insulation layer is used to control performance of an etch that selectively removes a first portion of the first insulating layer fro...