ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,021, issued on July 15, was assigned to STMICROELECTRONICS S.r.l. (Agrate Brianza, Italy) and STMICROELECTRONICS (TOURS) SAS (Tours, France).
"Overvoltage protection device" was invented by Jean-Michel Simonnet (Veretz, France), Sophie Ngo (St-Avertin, France) and Simone Rascuna' (Catania, Italy).
According to the abstract* released by the U.S. Patent & Trademark Office: "Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes a first diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second dio...