US Patent Issued to STMicroelectronics, STMicroelectronics (Grenoble 2) on Nov. 25 for "Non-volatile phase-change memory device including a distributed row decoder with n-channel MOSFET transistors and related row decoding method" (Italian, French Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,521, issued on Nov. 25, was assigned to STMicroelectronics S.r.l. (Agrate Brianza, Italy) and STMicroelectronics (Grenoble 2) SAS (Grenoble, France).

"Non-volatile phase-change memory device including a distributed row decoder with n-channel MOSFET transistors and related row decoding method" was invented by Antonino Conte (Tremestieri Etneo, Italy), Alin Razafindraibe (Saint Martin d'Heres, France), Francesco Tomaiuolo (Acireale, Italy) and Thibault Mortier (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a non-volatile memory device is proposed. The device includes a plurality of local pull-up stages distributed a...