US Patent Issued to STMicroelectronics, STMicroelectronics (Crolles 2) on July 8 for "Phase change memory" (Italian, French Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,634, issued on July 8, was assigned to STMicroelectronics S.r.l. (Agrate Brianza, Italy) and STMicroelectronics (Crolles 2) SAS (Crolles, France).

"Phase change memory" was invented by Paolo Giuseppe Cappelletti (Seveso, Italy), Fausto Piazza (Grenoble, France) and Andrea Redaelli (Milan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell includes a substrate with a semiconductor region and an insulating region. A first insulating layer extends over the substrate. A phase change material layer rests on the first insulating layer. The memory cell further includes an interconnection network with a conductive track. A first end of a first condu...