US Patent Issued to STMicorelectronics (Crolles 2) on Jan. 13 for "Germanium-on-silicon laser in CMOS technology" (French Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,771, issued on Jan. 13, was assigned to STMicorelectronics (Crolles 2) SAS (Crolles, France).

"Germanium-on-silicon laser in CMOS technology" was invented by Mathias Prost (Tremblay-en-Franc, France), Moustafa El Kurdi (Cachan, France), Philippe Boucaud (Paris) and Frederic Boeuf (Le Versoud, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure ...