ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,353, issued on June 17, was assigned to SPTS Technologies Ltd. (Newport, Great Britain).
"Method and apparatus for plasma etching" was invented by Weikang Fan (Newport, Great Britain) and Stephan Shannon L. Lilje (Newport, Great Britain).
According to the abstract* released by the U.S. Patent & Trademark Office: "Plasma etching a compound semiconductor substrate includes providing a substrate that includes a compound semiconductor material on a substrate support within a chamber. An etchant gas or gas mixture is introduced into the chamber. A plasma of the etchant gas or gas mixture is sustained within the chamber to plasma etch the compound semiconductor material. A pulsed elect...