ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,152, issued on July 15, was assigned to SPTS Technologies Ltd. (Newport, Great Britain).
"Plasma etching apparatus and method" was invented by Maxime Varvara (Newport, Great Britain) and Codrin Prahoveanu (Newport, Great Britain).
According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma etching apparatus for etching a semiconductor substrate comprises: a plasma chamber; a plasma generation device for sustaining a plasma within the plasma chamber; a substrate support disposed within the plasma chamber for supporting the semiconductor substrate, the substrate support comprising an electrically conductive structure; a power supply for providing an RF elec...