ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,372, issued on Dec. 9, was assigned to SPTS Technologies Ltd. (Newport, Great Britain).
"Plasma etched silicon carbide" was invented by Alex Croot (Newport, Great Britain).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of plasma etching a compound semiconductor substrate forms a feature. A first plasma etch step anisotropically etches the substrate through an opening to produce a partially formed feature having an opening and a bottom surface with a peripheral region. A second plasma etch step removes a region of the mask adjacent to the opening of the partially formed feature thereby causing rounding of the edges of the substrate at the open...