US Patent Issued to Southern University of Science and Technology on Oct. 7 for "Memory device" (American, Chinese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,590, issued on Oct. 7, was assigned to Southern University of Science and Technology (GuangDong, China).

"Memory device" was invented by Guobiao Zhang (Corvallis, Ore.) and Zhitang Song (ShangHai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A cross-point memory includes a plurality of memory devices, with each device comprising a memory layer between first and second address lines. In one preferred embodiment, the memory layer comprises an OTS (Ovonic Threshold Switch) film and an antifuse film. In another preferred embodiment, the memory layer comprises an OTS film having a first switch voltage (i.e. forming voltage Vform) greater than all subsequ...