US Patent Issued to SOUTHEAST UNIVERSITY on July 22 for "Non-isolated resonant gate drive circuit" (Chinese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,368,371, issued on July 22, was assigned to SOUTHEAST UNIVERSITY (Nanjing, China).

"Non-isolated resonant gate drive circuit" was invented by Qinsong Qian (Nanjing, China), Ziyan Zhou (Nanjing, China), Qiang Luo (Nanjing, China), Qi Liu (Nanjing, China), Song Ding (Nanjing, China), Weifeng Sun (Nanjing, China) and Longxing Shi (Nanjing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-isolated resonant gate drive circuit includes a PMOS drive network, an NMOS clamping circuit and an inductor. The PMOS drive network and the NMOS clamping circuit are connected in parallel to two terminals of the inductor. Input signals of the PMOS drive network ...