ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,315, issued on Nov. 25, was assigned to SOUTH CHINA UNIVERSITY OF TECHNOLOGY (Guangzhou, China).

"Solar-blind AlGaN ultraviolet photodetector and preparation method thereof" was invented by Wenliang Wang (Guangzhou, China), Linhao Li (Guangzhou, China), Guoqiang Li (Guangzhou, China) and Hongsheng Jiang (Guangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention discloses a solar-blind AlGaN ultraviolet (UV) photodetector and a preparation method thereof. The solar-blind AlGaN UV photodetector comprises an UV photodetector epitaxial wafer, including an undoped N-polar plane AlN buffer layer, a carbon-doped N-polar plane Al...